Characteristics of Semiconductor Devices

Introduction:

The goal of this task is to get familiar with measurement of basic parameters of semiconductor devices.

Instructions:

  1. Get familiar with principles and control of the curve tracer HM6042
  2. Observe and record V-A characteristics of different types of diodes on the curve tracer:
    • Ge diode,
    • Si diode,
    • LED diodes of various colours,
    • Zener (stabilizing) diode.
    Characterize the diodes by measuring the voltage drop in the permeable direction having current 1 mA flowing through the diode, and also by finding the reverse voltage at which the current through the diode will be 100 microamperes.
  3. Measure V-A characteristics of Si and Ge transistors. Find out and mention in the protocol the following parameters:
    • the current amplifying coefficient
    • the residual current of collector for both the short-circuit base and not connected base
    • maximum voltage between the collector and emitter for both the short-circuit base and not connected base
  4. Using the voltmeter and ampermeter, measure in detail the V-A characteristic of Zener diode in the reverse direction. Measure the slope (the rate of rise) of the characteristic for current in the reverse direction within the range of 10-20 mA. Use a protective resistor 100-300 Ohms in series with the diode for this measurement. Draw the scheme of the used circuit to the protocol.
  5. In the same way, measure in detail the characteristics and their slopes for two LED diodes of different colours in the permeable direction in the current range of 10-20 mA.

Note: if available, write the type designation of each diode and transistor to the protocol. In the case of LED diodes, mention their colour.

Josef Blažej - contact - blazej   troja.fjfi.cvut.cz - phone: +420 224 358 659
Czech Technical University in Prague - Faculty of Nuclear Sciences and Physical Engineering
Brehova 7, 115 19 Prague 1, Czech Republic